A new three-dimensional (3D) electric field enhanced generation model has been developed to describe the electric field effects on the thermal electron–hole pair generation rate. The originality of this model lies in the full three-dimensional description of the synergetic mechanism between the Poole–Frenkel barrier lowering and the phonon-assisted tunneling mechanism. To do this, a classical one-dimensional (1D) model has been integrated over all possible directions of emission of the carriers. The 3D model has been implemented in a Monte Carlo tool devoted to the simulation of the dark current increase induced by radiations in image sensors. Our three-dimensional simulation has been compared to one-dimensional electric field effects’ simulations and experimental data found in the literature in the context of gold contamination. The consequence of using a three-dimensional electric field enhanced generation (EFEG) model is the reduction of the dispersive effect on the dark current distribution of the electric field; hence, each dark current peak is narrower and shows a higher peak's amplitude. The three-dimensional model needs to slightly change the cross-sectional parameters used for a 1D EFEG case to keep a realistic description of each dark current peak of the histogram. In the rest of the paper, we extended our work on constraints relative to space applications. The histograms of the simulated dark current taking into account one- and three-dimensional electric field enhancement effects have been estimated and compared to experimental data acquired after a proton irradiation at room temperature. The use of a three-dimensional model tends to give a more realistic prediction of the dark current non-uniformity in an irradiated pixel array.

中文翻译：

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3D 电场增强模型对像素阵列中暗电流的蒙特卡罗计算的影响

已开发出一种新的三维 (3D) 电场增强生成模型来描述电场对热电子-空穴对生成速率的影响。该模型的独创性在于对 Poole-Frenkel 势垒降低和声子辅助隧穿机制之间的协同机制进行了完整的三维描述。为此，在载流子的所有可能发射方向上集成了经典的一维 (1D) 模型。3D 模型已在 Monte Carlo 工具中实现，该工具专门用于模拟图像传感器中辐射引起的暗电流增加。我们的三维模拟已与一维电场效应模拟和文献中金污染背景下的实验数据进行了比较。使用三维电场增强发电（EFEG）模型的结果是减少了对电场暗电流分布的色散效应；因此，每个暗电流峰值更窄，并显示出更高的峰值幅度。三维模型需要稍微改变用于一维 EFEG 情况的横截面参数，以保持对直方图的每个暗电流峰值的真实描述。在本文的其余部分，我们扩展了与空间应用相关的约束方面的工作。考虑到一维和三维电场增强效应的模拟暗电流的直方图已被估计，并与在室温下质子照射后获得的实验数据进行比较。