Synthesizing monolayers and heterostructures is an enabling approach to extract new physical phenomena from bulk materials. Among the structures amenable to this approach is stanene, which is a monolayer of tin, similar to graphene, and has been predicted to host one-dimensional topological states at its edges. Stanene can be tuned by decorating with different adatoms, which makes it a promising platform on which to engineer topological devices. Here, we deposit Sn on Bi2Te3 and characterize the growth using anomalous synchrotron x-ray scattering and x-ray photoelectron spectroscopy (XPS). X-ray diffraction data reveal the formation of epitaxial Sn-based structures, along with penetration of Sn into the Bi2Te3, with Sn intercalating between the upper 10 Bi2Te3 quintuple layers. Additionally, XPS data show deposited Sn reacting to form SnTe and Bi at the Bi2Te3 surface. The calculated heat of reaction for Sn and Bi2Te3 is consistent with an exothermic reaction to SnTe and Bi. Using thermodynamic calculations as a guide, we identify several candidate substrates that can stabilize the stanene phase.

中文翻译：

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识别 Bi2Te3 上锡烯界面处的晶体结构和化学反应

合成单层和异质结构是从大块材料中提取新物理现象的一种有效方法。适合这种方法的结构中有锡烯，它是锡的单层，类似于石墨烯，并且已被预测在其边缘具有一维拓扑状态。Stanene 可以通过用不同的吸附原子装饰来调整，这使其成为设计拓扑设备的有前途的平台。在这里，我们在 Bi2Te3 上沉积 Sn，并使用异常同步加速器 x 射线散射和 x 射线光电子能谱 (XPS) 表征生长。X 射线衍射数据揭示了外延 Sn 基结构的形成，以及 Sn 渗透到 Bi2Te3 中，并且 Sn 插在上部 10 个 Bi2Te3 五重层之间。此外，XPS 数据显示沉积的 Sn 在 Bi2Te3 表面反应形成 SnTe 和 Bi。Sn 和 Bi2Te3 的计算反应热与 SnTe 和 Bi 的放热反应一致。使用热力学计算作为指导，我们确定了几种可以稳定 stanene 相的候选底物。