While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-charge-limited conduction, we derive a general analytical approach to extract the charge-carrier density, the conduction-band edge and the drift components of the current density-voltage curves of a single-carrier device when the semiconductor is either undoped, lightly doped or heavily doped. The presented model covers the entire voltage range, i.e., both the low-voltage regime and the Mott-Gurney regime. We demonstrate that there is an upper limit to how doped a device must be before the current density-voltage curves are significantly affected, and we show that the background charge-carrier density must be considered to accurately model the drift component in the low-voltage regime, regardless of whether the device is doped or not. We expect that the final analytical expressions presented herein to be directly useful to experimentalists studying charge transport in novel materials and devices.

中文翻译：

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单载流子器件中混合欧姆和空间电荷限制传导的解析描述

虽然空间电荷限制电流测量通常用于表征相对本征低迁移率半导体中的电荷传输，但目前很难用这种方法表征轻掺杂或重掺杂半导体。通过结合描述欧姆和空间电荷限制传导的理论，我们推导出一种通用的分析方法来提取单载流子器件的电流密度-电压曲线的电荷载流子密度、导带边缘和漂移分量当半导体未掺杂、轻掺杂或重掺杂时。所提出的模型涵盖了整个电压范围，即低压状态和莫特-格尼状态。我们证明了在电流密度 - 电压曲线受到显着影响之前，器件必须掺杂的程度存在上限，并且我们表明必须考虑背景电荷载流子密度以准确模拟低电压状态下的漂移分量，无论器件是否掺杂。我们希望本文提出的最终分析表达式对研究新材料和器件中的电荷传输的实验者直接有用。