Perfect absorption of light by an optically thin metasurface is among several remarkable optical functionalities enabled by nanophotonics. This functionality can be introduced into optoelectronic devices by structuring an active semiconductor-based element as a perfectly absorbing all-dielectric metasurface, leading to improved optical properties while simultaneously providing electrical conductivity. However, a delicate combination of geometrical and material parameters is required for perfect absorption, and currently, no general all-dielectric metasurface design fulfills these conditions for a desired semiconductor and operation wavelength. Here, using numerical simulations, we demonstrate that Mie resonators with subwavelength-size interconnecting channels allow this combination of perfect absorption requirements to be satisfied for different wavelengths of operation and different levels of intrinsic material absorption. We reveal the underlying physics and show that interconnecting channels play a critical role in achieving perfect absorption through their effects on the resonant wavelengths and losses for the electric dipole and magnetic dipole modes in Mie resonators. By adjusting only the channel widths, perfect absorption can be achieved for an optically thin GaAs-based metasurface at a desired wavelength of operation in a range from 715 nm to 840 nm, where the intrinsic absorption level in GaAs varies by more than a factor of 2. Optical transmission experiments confirm that these metasurfaces resonantly enhance optical absorption. This work lays out the foundation and guidelines for replacing bulk semiconductors with electrically connected, optically thin, perfectly absorbing metasurfaces in optical detectors.

中文翻译：

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完美吸收介电超表面，用于光电检测

纳米光子学可以实现光学上超薄的表面对光的完美吸收，这是几种出色的光学功能之一。通过将基于有源半导体的元件构造为完美吸收全电介质超表面的方法，可以将此功能引入光电器件，从而在改善光学性能的同时提供导电性。然而，为了完美吸收，需要几何和材料参数的精细结合，目前，对于所需的半导体和工作波长，没有任何通用的全介电超表面设计可以满足这些条件。在这里，使用数值模拟，我们证明了具有亚波长大小的互连通道的Mie谐振器可以满足不同工作波长和不同水平本征材料吸收的完美吸收要求的这种组合。我们揭示了潜在的物理原理，并表明互连通道通过它们对Mie谐振器中电偶极子和磁偶极子模式的谐振波长和损耗的影响，在实现完美吸收方面起着至关重要的作用。通过仅调节通道宽度，可以在715 nm至840 nm范围内的所需工作波长下，对光学薄的基于GaAs的超颖表面实现完美的吸收，其中GaAs的本征吸收水平的变化幅度大于1倍。 2。光学传输实验证实，这些超表面会共振地增强光学吸收。这项工作为用光电探测器中的电连接的，光学上薄的，吸收良好的超颖表面代替大块半导体奠定了基础和指导原则。