ABSTRACT

The effect of Thomson heating on semiconductor medium is studied. Analytical discussions in the presence of thermoelectricity and magnetic field, in the context of photothermal transport process, are made. The interactions between plasma, thermoelectric, magnetic and elastic waves are taken into consideration. The governing equations are investigated in two-dimensional deformations of a homogenous, isotropic medium. The density of charge is taken only as a function of time of the induced electric current. The normal mode technique is used to obtain the physical quantities field under investigation. Some electro-mechanical loads and thermal effect through recombination process are applied at the free surface of semiconductor elastic medium. The distributions of physical fields in this phenomenon are discussed and represented graphically. The results have been discussed under the effects of thermoelectric parameter and Thomson parameter.

摘要

研究了汤姆逊加热对半导体介质的影响。在光热传输过程的背景下，在存在热电和磁场的情况下进行了分析讨论。考虑了等离子体、热电、磁和弹性波之间的相互作用。在均质、各向同性介质的二维变形中研究了控制方程。电荷密度仅作为感应电流时间的函数。正常模式技术用于获得所研究的物理量场。在半导体弹性介质的自由表面上施加了一些机电负载和通过复合过程产生的热效应。讨论并以图形方式表示了该现象中物理场的分布。