A wide‐band absorber and reflector using PIN diodes based on active frequency selective surface (AFSS) is presented, which the AFSS is performed as a wide‐band absorber and reflector with OFF and ON state diodes. By changing the states of the PIN diodes, the measured reflectivity of the structure can dynamically switch from reflection to less than −10 dB absorptivity ranging from 7.5 to 18 GHz under normal incidence. The unique characteristic of the proposed structure lies in its capability to switch between two working states. In addition, the bandwidth of the designed structure covers a wider band compared with earlier switchable absorber/reflector structures. The fabricated structure shows good agreement with the simulated results.

中文翻译：

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基于有源频率选择表面的宽带可切换吸收器/反射器

提出了一种使用基于有源频率选择表面（AFSS）的PIN二极管的宽带吸收器和反射器，该AFSS用作具有OFF和ON状态二极管的宽带吸收器和反射器。通过改变PIN二极管的状态，在垂直入射下，测得的结构反射率可以动态地从反射切换到7.5至18 GHz范围内的低于-10 dB的吸收率。所提出的结构的独特特征在于其在两种工作状态之间切换的能力。另外，与较早的可切换吸收器/反射器结构相比，设计结构的带宽覆盖了更宽的频带。制作的结构与仿真结果吻合良好。