Wide‐bandgap semiconductor materials, like gallium nitride (GaN) and silicon carbide (SiC), promise to deliver a substantial advancement in the level of energy efficiency and overall size reduction in power electronic converters. This work uses the bridgeless totem‐pole power factor correction (PFC) rectifier to compare theoretical and experimental efficiency and switching energies when using GaN high electron mobility transistor (HEMT) and insulated gate bipolar transistor (IGBT) devices. An experimental prototype of 1‐kW output power and 220‐V input voltage is built to verify the characteristics of GaN HEMT technology as well as the performance of the converter in power supplies for application with battery charging. The theoretical switching energies that are calculated to the traditional methods, were shown to be in close agreement with the experimental data, simplifying the design and choice of GaN devices by the designers. GaN devices showed a marginally better efficiency than theoretical predictions, even at low switching frequencies, whereas IGBT devices showed a poorer efficiency than theoretical predictions. Peak efficiency using GaN HEMTs was 98.43% at 50% load and 98.16% at full load. With the use of IGBTs, the peak efficiency was 96.69% at 30% load.

中文翻译：

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使用GaN和绝缘栅双极晶体管器件的无桥图腾柱功率因数校正整流器的效率评估，用于电池充电器

氮化镓（GaN）和碳化硅（SiC）等宽带隙半导体材料有望在能源效率水平和功率电子转换器整体尺寸减小方面取得实质性进步。这项工作使用无桥图腾柱功率因数校正（PFC）整流器来比较使用GaN高电子迁移率晶体管（HEMT）和绝缘栅双极晶体管（IGBT）器件时的理论效率和实验效率以及开关能量。构建了一个1kW输出功率和220V输入电压的实验原型，以验证GaN HEMT技术的特性以及用于电池充电的电源转换器的性能。根据传统方法计算得出的理论开关能量，结果表明，这些数据与实验数据非常吻合，从而简化了设计人员的GaN器件设计和选择。GaN器件即使在低开关频率下也显示出比理论预测略高的效率，而IGBT器件显示出比理论预测差的效率。使用GaN HEMT的峰值效率在50％负载下为98.43％，在满负载下为98.16％。通过使用IGBT，在30％负载时的峰值效率为96.69％。