Atom Probe Tomography (APT) was used to quantify carbon in implanted silicon at two various electric fields (~ 15 and 20 V/nm). Using equal proportions of implanted 12C and 13C, the numerous molecular ions that were observed were identified and their contribution to the carbon content statistically derived. Much more accurate carbon quantification was obtained in the lowest electric field analysis by comparing APT with Secondary Ion Mass Spectroscopy profiles. This was assigned to a lower amount of molecular ion dissociations. Furthermore, the number of self-interstitials trapped per carbon atom in clusters was derived. This value of interest for the microelectronics industry regarding dopant diffusion and implantation induced defects was estimated close to one, in agreement with the expected stoichiometry of the SiC phase present in the phase diagram. However, this was obtained only when using low electric field conditions.

中文翻译：

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硅中碳的原子探针断层扫描定量

原子探针断层扫描 (APT) 用于在两种不同的电场（~ 15 和 20 V/nm）下量化注入硅中的碳。使用相同比例的注入 12C 和 13C，可以确定观察到的众多分子离子，并从统计上得出它们对碳含量的贡献。通过将 APT 与二次离子质谱图谱进行比较，在最低电场分析中获得了更准确的碳定量。这归因于较低量的分子离子解离。此外，还推导出簇中每个碳原子捕获的自填隙数。微电子行业对掺杂剂扩散和注入引起的缺陷感兴趣的价值估计接近 1，与相图中存在的 SiC 相的预期化学计量一致。然而，这仅在使用低电场条件时获得。