We observed abnormal threshold voltage (V_T) shift in amorphous InGaZnO (a-IGZO) thin-film transistors under negative gate bias stress (NBS) after soaking them in H₂O (pH 8). Before NBS, we soaked a-IGZO TFTs in H₂O. During application of NBS, V_T decreased by −0.43 V, then increased to nearly the initial value. We hypothesize that the electrical field that was applied during NBS caused some dissociation of H₂O to hydrogen ions (H⁺) and hydroxide ions (OH⁻); the effects between H⁺ and OH⁻ are responsible for the changes of ΔV_T. The initial decrease was a result of trapping of H⁺ at the front channel; the subsequent increase was caused by neutralization of the H⁺ and the OH⁻; the a-IGZO was very thin, so the front channel and the back channel could affect each other; therefore, mitigation of energy band bending was possible. Recovery after NBS also occurred in two-phases: V_T first increased then decreased to its initial value. During the recovery process, accumulation of an OH⁻ layer generated electric field that attracted H⁺ so that the two species recombined. Increase in ΔV_T occurred due to desorption of H⁺ from the front-channel interface, and decrease in ΔV_T occurred by recombination.

我们观察到非晶InGaZnO（a-IGZO）薄膜晶体管在H ₂ O（pH 8）中浸泡后，在负栅极偏置应力（NBS）下的异常阈值电压（V _T）偏移。在NBS之前，我们将a-IGZO TFT浸泡在H ₂ O中。在NBS施加期间，V _T降低-0.43 V，然后增加到接近初始值。我们推测，这是NBS期间施加的电场引起的H的一些离解₂到氢离子（H 2 O ⁺）和氢氧根离子（OH ^-）; h的影响⁺和OH ^-负责Δ的变化V _Ť。最初的减少是由于H ⁺滞留在前通道的结果。随后的增加是由H的中和引起的⁺和OH ^- ; a-IGZO非常薄，因此前通道和后通道可能会相互影响。因此，可以减轻能带弯曲。NBS后的恢复也分为两个阶段：V _T先增加然后降低到其初始值。在恢复过程中，OH的积累^-产生的电场层吸引ħ ⁺使得两个物种重组。ΔV _T的增加是由于H ^+的解吸从前通道接口开始，由于重组而导致ΔV _T降低。