Abstract

It is shown that self-forming GeSi nanoislands built into the dielectric–semiconductor interface in the Si(001)-based metal–oxide–semiconductor (MOS) structures with the SiO_x and ZrO₂(Y) dielectric layers obtained by magnetron sputtering initiate bipolar resistive switching without preliminary electroforming. The I–V characteristics and electrical parameters of the MOS structures in the high- and low-resistance states have been investigated. The change in the charge incorporated in the dielectric at the dielectric–semiconductor interface during resistive switching has been established, which is related to the formation and destruction of conducting filaments. The optically stimulated switching of the MOS structures with the ZrO₂(Y) dielectric layer from the high- to low-resistance state has been observed, which is caused by an increase in the conductivity of the space charge region in the Si substrate due to the interband optical absorption in Si leading to the voltage redistribution between Si and ZrO₂(Y). A difference between the shapes of the low-signal photovoltage spectra of the MOS structures in the spectral region of the Si intrinsic photosensitivity in the high- and low-resistance states related to the leakage of photoexcited carriers from Si into a metal electrode through filaments has been found.

中文翻译：

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硅基板上具有GeSi纳米岛的金属-氧化物-半导体结构中的电阻切换

摘要

结果表明，在通过磁控溅射获得的SiO _x和ZrO ₂（Y）介电层的Si（001）基金属-氧化物-半导体（MOS）结构的介电-半导体界面中内置了自形成的GeSi纳米岛。双极性电阻开关，无需预先进行电铸。研究了高阻态和低阻态下MOS结构的I – V特性和电参数。在电阻切换期间，已经确定了电介质-半导体界面处电介质中所含电荷的变化，这与导电丝的形成和破坏有关。ZrO对MOS结构的光激发开关观察到从高电阻状态到低电阻状态的₂（Y）介电层，这是由于Si中带内光吸收导致Si衬底中空间电荷区的电导率增加导致电压重新分布所致在Si和ZrO ₂（Y）之间。在高和低电阻状态下，Si结构本征光敏性的MOS结构的低信号光电压谱的形状之间的差异与光激发载流子从Si通过细丝泄漏到金属电极中有关被发现。