A single domain REBCO bulk, fabricated with one seed whether by the top seeded melt growth method or top seeded infiltration growth (TSIG) process, consists of five growth sectors (GSs) generally. In this paper, we report a new method for batch production of single domain GdBCO bulks with one seed, but of different growth sectors (n-GSs, n = 2, 3, 5) by the RE+011 TSIG process. It is found that four single domain GdBCO bulks with 2-GSs and 3-GSs can be fabricated with a buffer added one seed method. The levitation forces and trapped fields indicate that the physical properties of samples decrease with the decreasing of the n-GSs, such as the largest levitation force and trapped field is achieved in the sample with 5-GSs, the smallest one is obtained in the sample with 2-GSs, and the middle one is obtained in the sample with 3-GSs. This is closely related to the number n of GSs which can lead to a different thickness of n-GSs and the pure c-GSs; these results have been studied in detail. This work provided a new effective way to improve the seed efficiency for the fabrication of single domain REBCO bulk superconductors.

中文翻译：

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通过RE + 011 TSIG工艺使用一个种子批量生产不同生长领域的单域GdBCO块的新方法

无论是通过顶部种子熔体生长法还是顶部种子浸润生长（TSIG）工艺，用一个种子制造的单域REBCO块通常由五个生长扇区（GSs）组成。在本文中，我们报告了一种通过RE + 011 TSIG工艺批量生产具有一个种子但具有不同生长部门（n -GSs，n = 2，3，5）的单域GdBCO批量的新方法。结果发现，通过添加一种种子的缓冲液可以制造出具有2-GS和3-GS的四个单畴GdBCO块。悬浮力和俘获场表明样品的物理性质随着n的减小而减小-GSs，例如在具有5-GSs的样品中获得最大的悬浮力和捕获场，在具有2-GSs的样品中获得最小的悬浮力，而在具有3-GSs的样品中获得最小的悬浮力。这与GS的数量n密切相关，后者可能导致n -GS和纯c-GS的厚度不同。这些结果已被详细研究。这项工作为提高单畴REBCO块状超导体的制造效率提供了一种新的有效途径。