Bi-doped (La,Sr)MnO₃ [(Bi_0.18La_0.56Sr_0.30) Mn_0.96O₃: BLSMO, t_BLSMO = 63 nm] epitaxial films were grown on NaGdO₃ (NGO) substrates by a flux-mediated doping approach. That is, the growth of a (La,Sr)MnO₃ (LSMO) film under the coexistence of a Bi-based liquid flux leads to successful Bi doping into the LSMO film, though Bi is a highly volatile element. The composition analysis revealed that Sr preferentially existed in the film over the flux and that Sr has a larger distribution equilibrium coefficient (K) than those of Mn and La, which is one of the evidence that Bi has substituted for the La site. The obtained BLSMO films had a tetragonal distorted structure owing to a compressive strain from the NGO substrate, and the tetragonality and the crystallinity were enhanced by increasing the amount of Bi. The tetragonal distortion of the BLSMO films induced a perpendicular magnetic anisotropy. Both the Bi substitution at the La site and the ratio of Mn²⁺/Mn³⁺ increased from the film body to the surface, a magnetic moment was decreased to 0.6 μ_B/Mn. Although the magnetic moment was low, the Curie temperature of the BLSMO film was above room temperature (RT), and the magnetic entropy change |ΔS_M| of 2.4 mJ/(cm³·K) was observed near RT. The BLSMO film is favored for magnetocaloric effect applications as well as spin-transfer-torque devices such as microwave oscillators.

中文翻译：

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在NdGdO ₃（110）衬底上生长的（La，Sr）MnO ₃薄膜中的Bi的磁通介导掺杂

双掺杂（La，Sr）MnO ₃ [（Bi _0.18 La _0.56 Sr _0.30）Mn _0.96 O ₃：BLSMO，t _BLSMO = 63 nm]外延膜通过助熔剂介导的掺杂方法在NaGdO ₃（NGO）衬底上生长。即，尽管Bi是高挥发性元素，但是在基于Bi的液体通量的共存下的（La，Sr）MnO ₃（LSMO）膜的生长导致成功地Bi掺杂到LSMO膜中。成分分析表明，Sr比助焊剂优先存在于膜中，Sr具有较大的分布平衡系数（K）比Mn和La的含量高，这是Bi替代La位置的证据之一。所获得的BLSMO膜由于来自NGO基板的压缩应变而具有四边形扭曲的结构，并且通过增加Bi的量来增强四边形和结晶性。BLSMO薄膜的四边形畸变引起垂直磁各向异性。无论是在La位的Bi置换和Mn的比例²⁺ / Mn为³⁺从膜体上升到表面，磁矩减小到0.6μ_乙/ Mn等。尽管磁矩很低，但是BLSMO薄膜的居里温度高于室温（RT），并且磁熵变| ΔS _M | 的2.4 mJ /（cm ³·K）在室温附近观察到。BLSMO膜特别适用于磁热效应应用以及自旋转移转矩设备，例如微波振荡器。