Resistive switching random access memory (RRAM) offers fascinating prospects in the field of nonvolatile memories, brain-inspired devices, neural network computing, and artificial intelligence machines. However, the underlying mechanism in resistive switching is still confused, which limits its further applications. In this work, a boehmite layer is fabricated at low temperature and shows low reset current, long retention, high on/off ratio, and low operation voltages. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is utilized to perform element analysis on the device and observe hydrogen ion transport. Three-dimensional (3D) mapping of hydrogen ion distribution in the high/low-resistance states reveal the hydrogen ion migration process in resistive switching. This study not only confirms the phenomenon of hydrogen ion migration experimentally but also gives further insight into the switching mechanism of RRAM.

中文翻译：

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非易失性存储器的低温处理勃姆石层中H离子迁移的观察

电阻切换随机存取存储器（RRAM）在非易失性存储器，受大脑启发的设备，神经网络计算和人工智能机器领域提供了令人着迷的前景。但是，电阻切换的基本机制仍然很混乱，这限制了它的进一步应用。在这项工作中，勃姆石层是在低温下制造的，并且显示出低的复位电流，长的保持时间，高的开/关比和低的工作电压。飞行时间二次离子质谱仪（TOF-SIMS）用于对设备进行元素分析并观察氢离子传输。高/低电阻状态下氢离子分布的三维（3D）映射揭示了电阻切换中的氢离子迁移过程。