Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS₂ heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm² V⁻¹ s⁻¹) and on/off-current ratio (∼10⁸) at room temperature. The van der Waals gap at the Gr/MoS₂ interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS₂, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS₂ is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures.

二维（2D）异质结构通常提供非凡的载流子传输，例如超导性或激子超流体性。最近，由几层氮化硼分隔的双层石墨烯（Gr）表现出库仑拖曳现象：有源层中的载流子拖曳了钝化层中的载流子。这里，我们提出高性能的Gr / MOS ₂经由库仑拖拉操作异质结构的晶体管，（表现出高载流子迁移〜 3700厘米²  V ^-1 小号^-1）和开/关电流比（〜 10 ⁸）在室温下。Gr / MoS ₂处的范德华间隙界面引起层间载流子之间的强相互作用，其重组被p -Gr和n -MoS ₂之间的肖特基势垒抑制，这明显不同于绝缘层的存在。横向电压的符号反转清楚地表明了库仑在载流子传输中的阻力。在磁场中观察到n -MoS ₂中电子的空穴状行为，表明低温下有很强的库仑阻力。因此，我们的库仑阻力晶体管为2D异质结构的实际应用提供了捷径。