A novel method for extracting threshold voltage and substrate effect parameters of MOSFETs with constant current bias at all levels of inversion is presented. This generalized constant-current (GCC) method exploits the charge-based model of MOSFETs to extract threshold voltage and other substrate-effect-related parameters. The method is applicable over a wide range of current throughout weak and moderate inversion, and to some extent in strong inversion. This method is particularly useful when applied for MOSFETs presenting edge conduction effect (subthreshold hump) in CMOS processes using shallow trench isolation (STI).

中文翻译：

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确定MOSFET阈值电压的广义恒流法

提出了一种新方法，用于提取具有恒定电流偏置的 MOSFET 在所有反转电平下的阈值电压和衬底效应参数。这种广义恒流 (GCC) 方法利用基于电荷的 MOSFET 模型来提取阈值电压和其他与基板效应相关的参数。该方法适用于较宽的电流范围，贯穿弱反演和中等反演，并在一定程度上适用于强反演。当应用于在使用浅沟槽隔离 (STI) 的 CMOS 工艺中呈现边缘传导效应（亚阈值隆起）的 MOSFET 时，该方法特别有用。