This article focuses on one of the floating body effects in silicon-on-insulator (SOI) substrates, the out-of-equilibrium body potential. Unlike the already existing studies which explore either SOI fully fabricated devices or SOI wafers measured with pressure probes, here the out-of-equilibrium body potential is explored in SOI substrates with deposited metal contacts. Chromium and gold/titanium contacts of various geometries were deposited on silicon films of SOI and the floating body potential was examined in each case. The effect of annealing on the device behavior was also investigated. The performance of the deposited metal contacts is evaluated through current and potential monitoring under quasi-static conditions. Depending on the workfunction difference between metal and silicon film, the current measurements show that the contact behavior is mainly ohmic-like or Schottky-like. While body potential manifests itself with Schottky-like contacts, it does not seem to exhibit a significant response with ohmic contacts. The influence of the contact architecture on the body potential signature is illustrated, enabling the selection of the proper contact layout for an enhanced body potential response.

中文翻译：

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具有沉积金属触点的绝缘体上硅的失衡体电位测量

本文重点介绍绝缘体上硅 (SOI) 衬底中的一种浮体效应，即失衡体电位。与探索 SOI 完全制造的器件或使用压力探针测量的 SOI 晶片的现有研究不同，这里在具有沉积金属触点的 SOI 衬底中探索了非平衡体电位。各种几何形状的铬和金/钛触点沉积在 SOI 的硅膜上，并在每种情况下检查浮体电位。还研究了退火对器件行为的影响。通过准静态条件下的电流和电位监测来评估沉积金属触点的性能。根据金属和硅膜的功函数差异，电流测量表明，接触行为主要是类欧姆或类肖特基的。虽然体电位通过类肖特基接触表现出来，但它似乎没有表现出对欧姆接触的显着响应。说明了接触结构对体电位特征的影响，从而能够选择合适的接触布局以增强体电位响应。