In this article, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low temperature (typically < 20 K) when back gate is forward biased. Humps appear in the current, leading to oscillations of the transconductance with gate voltage, owing to mobility discontinuity due to intersubband scattering, in relation with the 2-D subband structure. The conditions for which these specific features appear in thin-film silicon-on-insulator (SOI) devices have been analyzed, by varying the temperature, drain voltage, silicon channel thickness, and gate length.

中文翻译：

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薄膜 FDSOI nMOS 晶体管的低温操作：反向偏置对漏极电流和跨导的影响

在本文中，我们研究了在背栅正向偏置时在低温（通常 < 20 K）下运行的 nMOS 完全耗尽型绝缘体上硅 (FDSOI) 晶体管的漏极电流和跨导。由于与二维子带结构相关的子带间散射导致的迁移率不连续，电流中出现驼峰，导致跨导随栅极电压振荡。通过改变温度、漏极电压、硅沟道厚度和栅极长度，分析了这些特定特征出现在薄膜绝缘体上硅 (SOI) 器件中的条件。