A new differential method for accurate extraction of electrical parameters of high-electron mobility transistor (HEMT) devices for gallium nitride (GaN) technology is proposed. This method, presented here for the first time, is used to study the mobility degradation with gate length, allowing an analysis of the contribution of the gate edge region to the total metal–insulator semiconductor (MIS)-HEMT device conductance. First, an analytical model is proposed to account for the relative conduction of the edges and the main flat part of the channel HEMTs. Second, the differential method allows the split-CV mobility extraction of each part, allowing a precise analysis of the resistive contribution of each region of the HEMT devices. This study has been performed over a large range of channel lengths for two normally OFF HEMT GaN wafers having different recess depths.

中文翻译：

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使用新差分方法分析 GaN 技术的 MIS-HEMT 器件边缘行为

提出了一种用于氮化镓 (GaN) 技术的高电子迁移率晶体管 (HEMT) 器件电参数精确提取的新差分方法。此处首次介绍的这种方法用于研究迁移率随栅极长度的下降，从而可以分析栅极边缘区域对总金属绝缘体半导体 (MIS)-HEMT 器件电导的贡献。首先，提出了一个分析模型来解释通道 HEMT 的边缘和主要平坦部分的相对传导。其次，差分方法允许对每个部分进行拆分 CV 迁移率提取，从而可以精确分析 HEMT 器件每个区域的电阻贡献。