In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method for MOSFETs, is developed. The same method is then extended to cover also the case when series resistance is present, while series resistance itself may be determined from the measurement from two FETs with different channel lengths. The key technological and design parameter is the threshold voltage, which may be unambiguously determined from the transconductance-to-current ratio with a constant-current method. The new methods are shown to be effective over a wide range of technical parameters, using technology computer-aided design simulations.

中文翻译：

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结 FET 中的自由载流子迁移率、串联电阻和阈值电压提取

在本简报中，提出了用于确定双栅极结型场效应晶体管 (FET) 基本参数的提取方法。首先，开发了一种用于确定自由载流子有效迁移率的新方法，类似于最近提出的 MOSFET 方法。然后将相同的方法扩展到还包括存在串联电阻的情况，而串联电阻本身可以根据来自具有不同沟道长度的两个 FET 的测量值来确定。关键的技术和设计参数是阈值电压，它可以用恒流方法从跨导电流比中明确确定。使用技术计算机辅助设计模拟，新方法被证明在广泛的技术参数范围内是有效的。