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Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-11-01 , DOI: 10.1109/ted.2020.3023921
Viktor Sverdlov , Al-Moatasem Bellah El-Sayed , Hans Kosina , Siegfried Selberherr

The use of new materials with advanced properties has become mandatory to meet the needs for higher electronics performance at reduced power. Topological insulators (TIs) possess highly conductive topologically protected edge states which are insensitive to scattering and thus suitable for energy-efficient high-speed devices. Here, we evaluate the subband structure in a narrow nanoribbon of 1 $\text {T}^\prime$ molybdenum disulphide using an effective k.p Hamiltonian. Highly conductive topologically protected edge modes whose energies lie within the bulk band gap are investigated on equal footing with traditional electron and hole subbands. Due to the interaction between the edge modes at opposite sides, a small gap in their linear spectrum opens up in a narrow nanoribbon. This gap is shown to sharply increase with the perpendicular out-of-plane electric field, in contrast to the behavior in a wide nanoribbon with negligible edge modes’ interaction. This increase leads to a rapid decrease in the ballistic nanoribbon conductance and current with the electric field, which can be used for designing molybdenum disulphide nanoribbon-based current switches.

中文翻译:

1T' 相中拓扑绝缘的二硫化钼纳米带的电导率

必须使用具有先进性能的新材料来满足在降低功率的情况下获得更高电子性能的需求。拓扑绝缘体 (TI) 具有高度导电的拓扑保护边缘态,对散射不敏感,因此适用于节能高速器件。在这里,我们使用有效的 kp 哈密顿量评估了 1 $\text {T}^\prime$ 二硫化钼的窄纳米带中的子带结构。在与传统电子和空穴子带同等的基础上研究了能量位于体带隙内的高导电拓扑保护边缘模式。由于相对两侧边缘模式之间的相互作用,它们的线性光谱中的小间隙在窄纳米带中打开。与具有可忽略边缘模式相互作用的宽纳米带中的行为相反,该间隙随着垂直的面外电场而急剧增加。这种增加导致弹道纳米带电导和电流随电场快速下降,这可用于设计基于二硫化钼纳米带的电流开关。
更新日期:2020-11-01
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