In this work, we have investigated the influence of ${V}_{\text {t}}$ extraction procedure on overall ${V}_{\text {t}}$ variability of sub-10 nm ${W}_{\text {fin}}$ FinFETs. Using six different ${V}_{\text {t}}$ extraction techniques, we have experimentally demonstrated that the ${V}_{\text {t}}$ variability is independent of ${V}_{\text {t}}$ extraction procedure (unlike reported earlier). Furthermore, through systematic evaluation on commonly used ${V}_{\text {t}}$ extraction techniques, the physics behind this anomalous behavior is investigated. It is shown that the significant variation in metal gate work-function and gate dielectric charges in advanced CMOS nodes is mainly responsible for this behavior. This claim is further validated for FinFETs with deeply scaled fin-width and effective oxide thickness (EOT).

中文翻译：

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Vt 提取方法影响工艺引起的 Vt 可变性：这一事实是否仍然适用于先进技术节点？

在这项工作中，我们调查了 ${V}_{\text {t}}$ 整体提取程序 ${V}_{\text {t}}$ 亚 10 nm 的可变性 ${W}_{\text {fin}}$ FinFET。使用六种不同 ${V}_{\text {t}}$ 提取技术，我们已经通过实验证明 ${V}_{\text {t}}$ 可变性独立于 ${V}_{\text {t}}$ 提取程序（与之前报道的不同）。此外，通过对常用的系统评估 ${V}_{\text {t}}$ 提取技术，研究了这种异常行为背后的物理学。结果表明，高级 CMOS 节点中金属栅极功函数和栅极介电电荷的显着变化是造成这种行为的主要原因。对于具有深度缩放的鳍片宽度和有效氧化物厚度 (EOT) 的 FinFET，这一说法得到了进一步验证。