This article demonstrates low supply voltage ( ${V}_{{\text {DD}}}{)}$ and high-frequency polarization switching in an organic ferroelectric capacitor (OFEC). The Landau–Khalatnikov (LK) equation is used to model the organic ferroelectric (OFE) in the Sentaurus technology computer-aided design (TCAD) environment considering multidomain (MD) dynamics and interaction factor ( ${K}_{{\text {OFE}}}{)}$ , resulting in a strong resemblance with the reported experimental results. The operation of OFEC at gigahertz frequency is examined with the experimentally validated MD-LK model. We study the impact of multiple domains in the OFEC on the transient response considering three separate sizes of the top metal plate (TMP). Our findings show that OFEC with a larger TMP area charges slowly than the other OFEC with smaller and proposed area TMP because of the enormous amount of domains in the larger area TMP. Various effects of ${V}_{{\text {DD}}}$ , external resistor ( ${R}{)}$ , and LK static parameters on negative capacitance signature (NCS) are investigated. We observe the NCS effect at 1 V because the coercive voltage of the OFEC is around 0.56 V, which is 73.33% lower than the conventional ferroelectric (FE) lead zirconate titanate (PZT), resulting in a minimum energy-delay product (EDP) of $2.7\times 10^{-{26}}$ Js. We observe that as the value of ${K}_{{\text {OFE}}}$ increases, the nature of domain wall switches from hard to soft, that is, coercive voltage reduces, resulting in a smaller hysteresis loop. Finally, a passive voltage amplifier (PVA) is implemented which shows voltage amplification of 1.45 at 500 MHz with low viscosity ( $\rho _{{\text {OFE}}} = {4.5}\,\,\Omega $ cm), which is still a challenge for PZT-based NC field-effect transistor (NCFET) reported in the literature.

中文翻译：

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P(VDF-TrFE) 铁电电容器和无源电压放大中的多域负电容效应

本文演示了低电源电压（ ${V}_{{\text {DD}}}{)}$ 和有机铁电电容器 (OFEC) 中的高频极化切换。Landau-Khalatnikov (LK) 方程用于在 Sentaurus 技术计算机辅助设计 (TCAD) 环境中对有机铁电 (OFE) 进行建模，同时考虑多域 (MD) 动力学和相互作用因子 ( ${K}_{{\text {OFE}}}{)}$ ，导致与报告的实验结果非常相似。OFEC 在千兆赫频率下的运行通过实验验证的 MD-LK 模型进行了检查。考虑到顶部金属板 (TMP) 的三种不同尺寸，我们研究了 OFEC 中的多个域对瞬态响应的影响。我们的研究结果表明，具有较大 TMP 区域的 OFEC 比具有较小和建议区域 TMP 的其他 OFEC 收费慢，因为较大区域 TMP 中有大量域。各种效果 ${V}_{{\text {DD}}}$ , 外部电阻 ( ${R}{)}$ ，研究了负电容特征 (NCS) 上的 LK 静态参数。我们观察到 1 V 时的 NCS 效应，因为 OF​​EC 的矫顽电压约为 0.56 V，比传统的铁电 (FE) 锆钛酸铅 (PZT) 低 73.33%，从而产生最小的能量延迟积 (EDP)的 $2.7\times 10^{-{26}}$ JS。我们观察到，作为 ${K}_{{\text {OFE}}}$ 增大，畴壁的性质由硬变软，即矫顽电压减小，导致磁滞回线变小。最后，实现了一个无源电压放大器 (PVA)，它在 500 MHz 下显示出 1.45 的电压放大率和低粘度（ $\rho _{{\text {OFE}}} = {4.5}\,\,\Omega $ cm)，这对于文献中报道的基于 PZT 的 NC 场效应晶体管 (NCFET) 来说仍然是一个挑战。