The impact of different process options on the low-frequency noise (LFN) performance and reliability of Ge nFinFETs is investigated. The results show that the LFN is mainly determined by carrier number fluctuations, and the density of traps in the high- $\kappa $ dielectric can be reduced by an extended dry clean. In some small-size devices, the Lorentzian-type noise comes from GR centers in the oxide layer or dislocations in the Ge fins. Due to the Coulomb scattering by charged oxide traps, Ge nFinFETs with higher input-referred voltage noise at flat band voltage ( $S_{{\text {vgfb}}}$ ) usually have a lower mobility. Since the charged traps in the oxide layer are one of the main responsible factors for the shift of the threshold voltage, the transistors with bigger $S_{{\text {vgfb}}}$ show higher PBTI degradation, and $S_{{\text {vgfb}}}$ can be considered as an early indicator for the reliability of Ge nFinFETs.

中文翻译：

---

伪栅极去除和硅帽对锗 nFinFET 低频噪声性能的影响

研究了不同工艺选项对 Ge nFinFET 的低频噪声 (LFN) 性能和可靠性的影响。结果表明，LFN 主要由载流子数波动和高密度陷阱密度决定。 $\kappa $ 延长干洗时间可以减少电介质。在一些小尺寸器件中，洛伦兹型噪声来自氧化层中的 GR 中心或 Ge 鳍片中的位错。由于带电氧化物陷阱的库仑散射，Ge nFinFET 在平带电压下具有更高的输入参考电压噪声（ $S_{{\text {vgfb}}}$ ) 通常具有较低的流动性。由于氧化层中的带电陷阱是阈值电压偏移的主要因素之一，因此具有更大的晶体管 $S_{{\text {vgfb}}}$ 表现出更高的 PBTI 降解，和 $S_{{\text {vgfb}}}$ 可以被认为是 Ge nFinFET 可靠性的早期指标。