Drain-extended MOSFET (DEMOS) with halo implant induced laterally asymmetric channel doping shows anomalous characteristics across bias and temperature that cannot be captured by existing models. The transconductance ( ${g}_{m}$ ) maxima in the linear region is found to be not only a function of the peak mobility but also the halo doping density. In the saturation region, the ${g}_{m}$ characteristics show a nonmonotonic “hump” induced by the halo-region/channel-region junction barrier. Another key care-about for analog design - the drain current ( ${I}_{D}$ ) mismatch, also exhibits unique characteristics with excess mismatch in the weak-inversion (WI) region, in particular at low temperature. In addition, the anomalous flicker noise ( ${1}/{f}$ noise) trends in the presence of high-trap density in the halo region of halo-implanted DEMOS are also discussed. In this work, we propose an analytical model based on the equivalent conductance and impedance field theory to capture these effects. The proposed model is in good agreement with measurements and numerical device simulations using technology computer-aided design (TCAD) of DEMOS across a different oxide thickness, geometry, bias, and temperature.

中文翻译：

---

Halo 注入漏极扩展 MOSFET 的电流失配和 1/f 噪声建模

具有晕圈注入引起的横向非对称沟道掺杂的漏极扩展 MOSFET (DEMOS) 显示出现有模型无法捕获的偏置和温度异常特性。跨导（ ${g}_{m}$ ) 线性区域中的最大值不仅是峰值迁移率的函数，也是晕圈掺杂密度的函数。在饱和区， ${g}_{m}$ 特征显示由晕区/通道区结势垒引起的非单调“驼峰”。模拟设计的另一个关键问题——漏极电流（ ${I}_{D}$ ) 失配，也表现出独特的特性，在弱反转 (WI) 区域，特别是在低温下，过度失配。此外，异常闪烁噪声（ ${1}/{f}$ 还讨论了在光环植入的 DEMOS 的光环区域中存在高陷阱密度的趋势。在这项工作中，我们提出了一个基于等效电导和阻抗场理论的分析模型来捕捉这些影响。所提出的模型与使用 DEMOS 技术计算机辅助设计 (TCAD) 在不同氧化物厚度、几何形状、偏置和温度下的测量和数值设备模拟非常一致。