This article presents a comparative low-frequency noise (LFN) characterization of gate-all-around nanosheet n-channel Si metal–oxide–semiconductor field effect transistors, processed with three different metal gates (MGs): an aluminum-based reference process and two alternative effective work function (EWF) stacks. In all cases, the gate dielectric is composed of HfO2 over an SiO2 interfacial layer. The LFN figures of merit are extracted, such as the oxide trap density and Coulomb scattering coefficient, and the correlations with the threshold voltage and the electron mobility are investigated. Carrier number fluctuations are confirmed as the dominant mechanism of the 1/ ${f}$ noise for all evaluated devices. Additionally, it is shown that the specific MG can contribute to the carrier scattering, degrading the electron mobility. The most promising results are obtained for one of the alternative MGs, exhibiting a low oxide trap density level, a low threshold voltage and insignificant mobility degradation.

中文翻译：

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具有不同金属栅极的垂直堆叠 Si n 沟道纳米片 FET 的低频噪声评估

本文介绍了使用三种不同金属栅极 (MG) 处理的环栅纳米片 n 沟道 Si 金属-氧化物-半导体场效应晶体管的比较低频噪声 (LFN) 表征：基于铝的参考工艺和两个替代的有效功函数 (EWF) 堆栈。在所有情况下，栅极电介质由 SiO2 界面层上的 HfO2 组成。提取了 LFN 品质因数，例如氧化物陷阱密度和库仑散射系数，并研究了与阈值电压和电子迁移率的相关性。载波数波动被确认为所有评估设备的 1/${f}$ 噪声的主要机制。此外，它表明特定的 MG 可以促进载流子散射，降低电子迁移率。