Critical design parameters for AlGaN/GaN Schottky barrier diodes (SBDs) are analyzed in this work using TCAD computations and detailed experiments. A comprehensive TCAD-based computational modeling approach is developed for GaN-based SBD. Breakdown mechanisms in SBD for unintentionally doped (UID) buffer, Fe-doped buffer and C-doped buffer are studied. For the first time, we have reported impact of anode recess, on breakdown and leakage behavior of SBD, in correlation with interface defects. Using these insights an optimum recess design strategy has been presented and is validated experimentally. Furthermore, for the first time, we have revealed critical repercussions of the field plate termination on SBD’s breakdown, leakage as well as transient behavior. Forward and reverse recovery measurements were carried out to study the diode’s transient performance as a function of field plate design. Various performance matrices such as diode current collapse, reverse current overshoot and reverse recovery time were studied experimentally as a function of field plate design. Moreover, the field plate-dependent electro-thermal behavior of SBD was studied using TCAD computations and experiments. Using the systematic device design approach we have experimentally demonstrated large periphery SBD with 15 A forward current at 5.5 V.

中文翻译：

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嵌入式 AlGaN/GaN 肖特基势垒二极管的设计指南和性能权衡

在这项工作中，使用 TCAD 计算和详细实验分析了 AlGaN/GaN 肖特基势垒二极管 (SBD) 的关键设计参数。为基于 GaN 的 SBD 开发了一种基于 TCAD 的综合计算建模方法。研究了 SBD 中无意掺杂 (UID) 缓冲液、Fe 掺杂缓冲液和 C 掺杂缓冲液的击穿机制。我们首次报道了阳极凹陷对 SBD 击穿和泄漏行为的影响，与界面缺陷相关。使用这些见解提出了最佳凹槽设计策略，并通过实验进行了验证。此外，我们首次揭示了场板终端对 SBD 击穿、泄漏和瞬态行为的关键影响。进行正向和反向恢复测量以研究作为场板设计函数的二极管的瞬态性能。作为场板设计的函数，通过实验研究了各种性能矩阵，例如二极管电流崩溃、反向电流过冲和反向恢复时间。此外，使用 TCAD 计算和实验研究了 SBD 依赖于场板的电热行为。使用系统器件设计方法，我们通过实验证明了具有 15 A 正向电流和 5.5 V 的大型外围 SBD。使用 TCAD 计算和实验研究了 SBD 依赖于场板的电热行为。使用系统器件设计方法，我们通过实验证明了具有 15 A 正向电流和 5.5 V 的大型外围 SBD。使用 TCAD 计算和实验研究了 SBD 依赖于场板的电热行为。使用系统器件设计方法，我们通过实验证明了具有 15 A 正向电流和 5.5 V 的大型外围 SBD。