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Study on Multilevel Resistive Switching Behavior With Tunable on/off Ratio Capability in Forming-Free ZnO QDs-Based RRAM
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2020-11-01 , DOI: 10.1109/ted.2020.3022005
Wenxiao Wang , Yang Li , Wenjing Yue , Song Gao , Chunwei Zhang , Zhenxiang Chen , Yuehui Chen

Resistive random access memories (RRAMs) have attracted tremendous attention due to their miniaturized size, low power consumption, high response speed, and simple fabrication requirements, which are regarded as a promising candidate for future nonvolatile memories. However, the traditional binary storage RRAMs fail to meet the high-density requirement in the area of big data. One of the ways to overcome this obstacle is to realize multilevel state transitions in a unit RRAM. Herein, we propose a facile spin-coating method to develop a multilevel RRAM based on Al/poly(methyl methacrylate) (PMMA)/ZnO quantum dots (QDs)/PMMA/ZnO QDs/PMMA/fluorine-doped tin oxide (FTO) structure, with the significant merits of typical forming-free bipolar resistive switching behavior, low-power operating voltage, stable endurance, and excellent retention. In specific, the ON/OFF ratio of the proposed ZnO QDs-based device can be adjusted by tuning the concentration of the ZnO QDs. Moreover, a multilevel RRAM performance with distinct four-level resistance states is obtained by varying the compliance current, which demonstrates that the proposed device has a specific application in multilevel data storage. The conductive filament model, combining the enhanced internal field and robust formation of the conductive filament, is introduced to explain the mechanism of the resistive switching behavior and multilevel performance. This work paves a new way for its prospect in constructing high-density data storage RRAMs.

中文翻译:

基于无形成ZnO QDs的RRAM中具有可调开/关比能力的多级电阻开关行为研究

电阻式随机存取存储器(RRAM)由于其体积小、功耗低、响应速度快和制造要求简单而引起了极大的关注,被认为是未来非易失性存储器的有希望的候选者。然而,传统的二进制存储RRAM无法满足大数据领域的高密度要求。克服这一障碍的方法之一是在单元 RRAM 中实现多级状态转换。在此,我们提出了一种简便的旋涂方法来开发基于 Al/聚(甲基丙烯酸甲酯)(PMMA)/ZnO 量子点(QDs)/PMMA/ZnO QDs/PMMA/氟掺杂氧化锡(FTO)的多级 RRAM结构,具有典型的无成型双极电阻开关行为、低功率工作电压、稳定的耐久性和出色的保持性的显着优点。具体来说,所提出的基于 ZnO QD 的器件的开/关比可以通过调整 ZnO QD 的浓度来调整。此外,通过改变顺从电流可以获得具有不同四级电阻状态的多级 RRAM 性能,这表明所提出的设备在多级数据存储中具有特定应用。引入导电细丝模型,结合增强的内场和导电细丝的稳健形成,以解释电阻开关行为和多级性能的机制。这项工作为其构建高密度数据存储 RRAM 的前景铺平了新的道路。通过改变顺从电流可以获得具有不同四级电阻状态的多级 RRAM 性能,这表明所提出的设备在多级数据存储中具有特定应用。引入导电细丝模型,结合增强的内场和导电细丝的稳健形成,以解释电阻开关行为和多级性能的机制。这项工作为其构建高密度数据存储 RRAM 的前景铺平了新的道路。通过改变顺从电流可以获得具有不同四级电阻状态的多级 RRAM 性能,这表明所提出的设备在多级数据存储中具有特定应用。引入导电细丝模型,结合增强的内场和导电细丝的稳健形成,以解释电阻开关行为和多级性能的机制。这项工作为其构建高密度数据存储 RRAM 的前景铺平了新的道路。介绍了解释电阻开关行为和多级性能的机制。这项工作为其构建高密度数据存储 RRAM 的前景铺平了新的道路。介绍了解释电阻开关行为和多级性能的机制。这项工作为其构建高密度数据存储 RRAM 的前景铺平了新的道路。
更新日期:2020-11-01
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