This study comprehensively investigates the impact of the time interval ( ${t}_{\text {wait}}$ ) between program/erase (P/E) cycles on the oxide quality of NAND Flash memory devices. It is observed that, at room temperature, P/E cycles with a shorter ${t}_{\text {wait}}$ yield a better oxide quality than those with a longer ${t}_{\text {wait}}$ . The oxide charge ( ${Q}_{T}$ ) evolution by distributed P/E cycles can be well described by an analytical equation through the extension of our previous statistical transconductance reduction ( $\Delta {G}_{m,\text {max}}$ ) method. This equation is characterized by a power of the number of P/E cycles multiplied by an exponential decay term of ${t}_{\text {wait}}$ . The former term is related to the ${Q}_{T}$ generation, whereas the latter is related to the ${Q}_{T}$ emission during ${t}_{\text {wait}}$ between cycles. This model allows to evaluate the activation energy for both ${Q}_{T}$ generation ( ${E}_{\text {A,G}}$ ) and recovery ( ${E}_{\text {A,R}}$ ). ${E}_{\text {A,G}}$ is revealed to be a function of the logarithmic scale of $t_{\text {wait}}$ , decreasing from 100 to 85 meV for ${t}_{\text {wait}}$ varying from 0.1 to 4 s. Moreover, ${E}_{\text {A,R}}$ is approximately 0.4 eV, which is consistent with the value of electron thermal emission from traps in SiO₂.

中文翻译：

---

编程/擦除循环间隔对 NAND 闪存器件跨导分布的影响

本研究全面调查了时间间隔的影响（ ${t}_{\text {wait}}$ ) 在编程/擦除 (P/E) 周期之间对 NAND 闪存器件的氧化物质量的影响。据观察，在室温下，P/E 周期较短 ${t}_{\text {wait}}$ 产生比那些具有更长的氧化物质量更好的氧化物 ${t}_{\text {wait}}$ . 氧化物电荷（ ${Q}_{T}$ ) 分布式 P/E 周期的演变可以通过我们之前的统计跨导减少的扩展通过分析方程很好地描述 ( $\Delta {G}_{m,\text {max}}$ ） 方法。该方程的特征在于 P/E 周期数乘以指数衰减项的幂 ${t}_{\text {wait}}$ . 前一个术语与 ${Q}_{T}$ 代，而后者与 ${Q}_{T}$ 期间排放 ${t}_{\text {wait}}$ 周期之间。该模型允许评估两者的活化能 ${Q}_{T}$ 一代 （ ${E}_{\text {A,G}}$ ) 和恢复 ( ${E}_{\text {A,R}}$ ）。 ${E}_{\text {A,G}}$ 显示为对数标度的函数 $t_{\text {wait}}$ , 从 100 meV 下降到 85 meV ${t}_{\text {wait}}$ 从 0.1 到 4 秒不等。而且， ${E}_{\text {A,R}}$ 约为 0.4 eV，这与 SiO _{2 中}陷阱的电子热发射值一致。