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Switching losses prediction methods oriented to power MOSFETs – a review
IET Power Electronics ( IF 2 ) Pub Date : 2020-10-22 , DOI: 10.1049/iet-pel.2019.1003
Wesley Josias Paula 1 , Gabriel Henrique Monteiro Tavares 1 , Guilherme Marcio Soares 1 , Pedro Santos Almeida 1 , Henrique Antonio Carvalho Braga 1
Affiliation  

The aim of this study is to review the state-of-the-art of recent prediction methods for power metal-oxide-semiconductor field-effect transistors (MOSFETs) switching losses using datasheet parameters. A detailed technical literature investigation is carried out to collect the latest research contributions on this subject, pointing out their main features and drawbacks. Then, a particular section is dedicated to compare three different selected methods oriented to Si-based and SiC-based MOS power transistors. This analysis is performed on several voltage and current level ratings using an experimental prototype of a double pulse circuit. According to the experimental-supported study included here, at a particular volt–ampere condition, the Ahmed method provided the lowest theoretical error of 2.38%, while the Guo method attained 41.2% and Brown method presented 28.5%. In addition, according to the experimental results it can be concluded that it is very difficult to obtain a high level of accuracy concerning MOSFET switching losses, mainly due to the uncertainty when selecting datasheet information. Among the parameters that most influence the measurements, one could list the MOSFET transconductance, the channel threshold voltage and the parasitic inductances.

中文翻译:

面向功率MOSFET的开关损耗预测方法–评论

这项研究的目的是使用数据表参数回顾功率金属氧化物半导体场效应晶体管(MOSFET)开关损耗的最新预测方法的最新技术。进行了详细的技术文献研究,以收集有关该主题的最新研究成果,并指出它们的主要特征和缺点。然后,一个特定的部分专门用于比较针对基于Si和SiC的MOS功率晶体管的三种不同的选择方法。使用双脉冲电路的实验原型对几种电压和电流等级进行了分析。根据此处包含的实验支持的研究,在特定的伏安条件下,Ahmed方法的理论误差最低,为2.38%,而Guo方法的理论误差为41。2%,布朗方法占28.5%。此外,根据实验结果,可以得出结论,很难获得有关MOSFET开关损耗的高精度,这主要是由于选择数据手册信息时的不确定性所致。在对测量有最大影响的参数中,可以列出MOSFET的跨导,沟道阈值电压和寄生电感。
更新日期:2020-10-27
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