A practical parameter extraction method for physics-based lumped-charge silicon carbide (SiC) merged PiN Schottky (MPS) diode model is presented. The physical parameters of a device model are necessary for accurate simulation but are usually not provided as these parameters are the core business profits of the manufacturers. The values of SiC MPS diode parameters are often based on assumptions or given in a wide range, thus the accuracy of the model simulation is compromised and the application of the model is also limited. The proposed method includes semiconductor physical and structural parameters and only some basic experiments are needed, such as reverse recovery and static characteristic experiments. Based on the lumped-charge SiC MPS diode model, reasonable assumptions are used and simple mathematical formulas are derived for the extraction of the parameters. Finally, the method is validated by two different SiC MPS diodes from CREE and CETC having the ratings of 1200 V/300 A and 3300 V/60 A.

中文翻译：

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基于物理学的集总电荷SiC MPS二极管模型的参数提取方法

提出了一种基于物理的集总电荷碳化硅（SiC）合并PiN肖特基（MPS）二极管模型的实用参数提取方法。设备模型的物理参数对于精确仿真是必需的，但通常不提供，因为这些参数是制造商的核心业务利润。SiC MPS二极管参数的值通常基于假设或在较大范围内给出，因此模型仿真的准确性受到损害，并且模型的应用也受到限制。所提出的方法包括半导体的物理和结构参数，仅需要一些基础实验，例如反向恢复和静态特性实验。根据集总电荷SiC MPS二极管模型，使用合理的假设，并导出简单的数学公式来提取参数。最后，该方法通过CREE和CETC的两个不同的SiC MPS二极管（额定值为1200 V / 300 A和3300 V / 60 A）进行了验证。