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Silicon Surface Passivation by Atomic Layer Deposited Hafnium Oxide Films: Trap States Investigation Using Constant Voltage Stress Studies
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2020-11-01 , DOI: 10.1109/jphotov.2020.3022686
Shweta Tomer , Meenakshi Devi , Abhishek Kumar , Subha Laxmi , C. M. S. Rauthan , Vandana Vandana

Excellent silicon surface passivation is demonstrated by the HfOx film deposited using optimized atomic layer deposition (ALD) process. For pristine films, surface recombination velocity (SRV) as low as ∼29 cm/s is achieved. The highest effective lifetime of 3 ms, corresponding to SRV of ∼5 cm/s, is achieved for hydrogen ambient annealed films. Capacitance–voltage and conductance–voltage measurements confirm that the pristine film consists of positive fixed charges, which remain of the same type or change polarity depending on the postdeposition annealing ambient. Constant voltage stress (CVS) measurements reveal that acceptor-like trap states are present in the film. These trap states are intrinsic in nature and are incorporated in the film structure during ALD growth. CVS study gives an insight to the change in fixed charge polarity in nitrogen ambient annealing, which is not the case in hydrogen ambient. The reduction in surface recombination losses is explained as a combined effect of field and chemical passivation where former dominates in nitrogen and later is dominant in hydrogen ambient annealed films.

中文翻译:

通过原子层沉积的氧化铪薄膜钝化硅表面:使用恒压应力研究的陷阱状态研究

使用优化的原子层沉积 (ALD) 工艺沉积的 HfOx 薄膜证明了出色的硅表面钝化。对于原始薄膜,表面复合速度 (SRV) 可低至 29 cm/s。对于氢气环境退火薄膜,最高有效寿命为 3 ms,对应于约 5 cm/s 的 SRV。电容-电压和电导-电压测量证实原始薄膜由正固定电荷组成,这些电荷保持相同类型或根据沉积后退火环境改变极性。恒压应力 (CVS) 测量表明,薄膜中存在类受体陷阱态。这些陷阱态本质上是固有的,并在 ALD 生长过程中结合到薄膜结构中。CVS 研究揭示了氮气环境退火中固定电荷极性的变化,而氢气环境中则不然。表面复合损失的减少被解释为场和化学钝化的综合效应,其中前者在氮中占主导地位,后来在氢环境退火膜中占主导地位。
更新日期:2020-11-01
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