Careful control of the laser patterning for the fabrication of an interdigitated back contact heterojunction (IBC-HJ) solar cell is needed to avoid laser-induced defects and heat-induced crystallization, which can produce higher carrier recombination and lower power conversion efficiency. The results of nanosecond laser patterning of an IBC-HJ test structure are reported, and it was shown that optimized laser ablation conditions using a sacrificial layer eliminates laser-induced damage of the underlying passivation layer. A rigorous set of characterizations, comprising of minority carrier lifetime, spatially resolved μ-photoluminescence, optical microscopy, ellipsometry, Essential Macleod program simulations, scanning electron microscopy, line-mapping energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, were undertaken to provide a deeper understanding of the nanosecond laser processing under a wide range of laser fluence. The evolving changes in surface morphologies of top sacrificial a-Si and SiNx and the use of color chart simulation for ablation-depth analysis were investigated. The μ-photoluminescence, carrier lifetime, and crystallinity in the passivation layer were evaluated. The trend in the change in the surface chemical constituency was determined in terms of Si/N ratio. Finally, the minimum laser fluence for the IBC-HJ test structure was determined and a negligible change in the implied open-circuit voltage was demonstrated.

中文翻译：

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叉指背接触异质结硅太阳能电池的纳秒脉冲激光图案化

需要仔细控制用于制造叉指背接触异质结 (IBC-HJ) 太阳能电池的激光图案，以避免激光诱导缺陷和热诱导结晶，这会产生更高的载流子复合和更低的功率转换效率。报告了 IBC-HJ 测试结构的纳秒激光图案化结果，结果表明使用牺牲层优化的激光烧蚀条件消除了激光诱导的底层钝化层损坏。一组严格的表征，包括少数载流子寿命、空间分辨 μ-光致发光、光学显微镜、椭偏仪、基本 Macleod 程序模拟、扫描电子显微镜、线映射能量色散 X 射线光谱、X 射线光电子能谱和拉曼光谱，进行了更深入的了解纳秒激光加工在大范围的激光能量密度下。研究了顶部牺牲 a-Si 和 SiNx 的表面形貌的演变变化以及用于烧蚀深度分析的彩色图表模拟的使用。评估了钝化层中的μ-光致发光、载流子寿命和结晶度。根据 Si/N 比确定表面化学成分的变化趋势。最后，确定了 IBC-HJ 测试结构的最小激光能量密度，并证明了隐含开路电压的变化可以忽略不计。研究了顶部牺牲 a-Si 和 SiNx 的表面形貌的演变变化以及用于烧蚀深度分析的彩色图表模拟的使用。评估了钝化层中的μ-光致发光、载流子寿命和结晶度。根据 Si/N 比确定表面化学成分的变化趋势。最后，确定了 IBC-HJ 测试结构的最小激光能量密度，并证明了隐含开路电压的变化可以忽略不计。研究了顶部牺牲 a-Si 和 SiNx 的表面形貌的演变变化以及用于烧蚀深度分析的彩色图表模拟的使用。评估了钝化层中的μ-光致发光、载流子寿命和结晶度。根据 Si/N 比确定表面化学成分的变化趋势。最后，确定了 IBC-HJ 测试结构的最小激光能量密度，并证明了隐含开路电压的变化可以忽略不计。