The implantation and rapid thermal annealing of sulfur (S⁺) ions has previously been shown to be an effective method in non-epitaxially attaining hole carrier concentrations as high as $1\times {10^{19}} \; \rm cm^{-3}$ in gallium antimonide (GaSb). This technique was used to fabricate a photovoltaic diode by delta-doping the front surface of a p-type GaSb substrate and forming a p⁺⁺/p junction. The steep potential created using this process is increased by strong Fermi level pinning at the metal/p⁺⁺ interface, resulting in a camel diode with a barrier height of 0.51 eV. A post-fabrication etch process succeeded in improving the short circuit current density to 41.8 mA/cm$^2$ and the internal quantum efficiency to 90% by enhancing the carrier lifetime away from the front metal contact grid. Likewise, the open circuit voltage improved to 0.21 V, with an intrinsic fill factor above 40%. These results offer the potential of a significantly higher power output than similar non-epitaxial devices made on n-type GaSb substrates.

中文翻译：

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注入硫的 p$^{++}$/p GaSb 光伏骆驼二极管的器件表征

硫 (S ⁺ ) 离子的注入和快速热退火先前已被证明是非外延获得高达$1\times {10^{19}} \; \rm cm^{-3}$在锑化镓 (GaSb) 中。该技术用于通过对 p 型 GaSb 衬底的前表面进行 delta 掺杂并形成 p ⁺⁺ /p 结来制造光伏二极管。使用此过程产生的陡峭电位通过金属/p ⁺⁺界面处的强费米能级钉扎而增加，从而产生势垒高度为 0.51 eV 的骆驼二极管。制造后蚀刻工艺成功地将短路电流密度提高到 41.8 mA/cm$^2$通过提高远离前金属接触网格的载流子寿命，将内部量子效率提高到 90%。同样，开路电压提高到 0.21 V，固有填充因子高于 40%。这些结果提供了比在 n 型 GaSb 衬底上制造的类似非外延器件更高的功率输出潜力。