This paper presents the results of a study on improving the performance parameters such as the impedance bandwidth, radiation gain and efficiency, as well as suppressing substrate loss of an innovative antenna for on-chip implementation for millimetre-wave and terahertz integrated-circuits. This was achieved by using the metamaterial and the substrate-integrated waveguide (SIW) technologies. The on-chip antenna structure comprises five alternating layers of metallization and silicon. An array of circular radiation patches with metamaterial-inspired crossed-shaped slots are etched on the top metallization layer below which is a silicon layer whose bottom surface is metalized to create a ground plane. Implemented in the silicon layer below is a cavity above which is no ground plane. Underneath this silicon layer is where an open-ended microstrip feedline is located which is used to excite the antenna. The feed mechanism is based on the coupling of the electromagnetic energy from the bottom silicon layer to the top circular patches through the cavity. To suppress surface waves and reduce substrate loss, the SIW concept is applied at the top silicon layer by implementing the metallic via holes at the periphery of the structure that connect the top layer to the ground plane. The proposed on-chip antenna has an average measured radiation gain and efficiency of 6.9 dBi and 53%, respectively, over its operational frequency range from 0.285–0.325 THz. The proposed on-chip antenna has dimensions of 1.35 × 1 × 0.06 mm³. The antenna is shown to be viable for applications in millimetre-waves and terahertz integrated-circuits.

本文介绍了一项研究结果，该研究结果旨在改善毫米波和太赫兹集成电路片上实现的创新天线的性能参数，如阻抗带宽，辐射增益和效率，以及抑制基板损耗。这是通过使用超材料和基片集成波导（SIW）技术实现的。片上天线结构包括五个交替的金属层和硅层。在顶部金属化层上刻蚀一系列带有超材料启发的十字形缝隙的圆形辐射贴片，在该金属化层下方是一个硅层，其底面被金属化以形成接地层。在下面的硅层中实现的是上面没有接地层的空腔。在该硅层下面是开放式微带馈线的位置，用于激励天线。馈送机制基于电磁能从底部硅层到空腔的顶部圆形贴片的耦合。为了抑制表面波并减少衬底损耗，通过在将顶层连接到接地层的结构外围实现金属过孔，将SIW概念应用于顶层硅层。所建议的片上天线在其0.285–0.325 THz的工作频率范围内，平均测得的辐射增益和效率分别为6.9 dBi和53％。建议的片上天线尺寸为1.35×1×0.06 mm 馈送机制基于电磁能量从底部硅层到空腔的顶部圆形贴片的耦合。为了抑制表面波并减少衬底损耗，通过在将顶层连接到接地层的结构外围实现金属过孔，将SIW概念应用于顶层硅层。所建议的片上天线在其0.285–0.325 THz的工作频率范围内，平均测得的辐射增益和效率分别为6.9 dBi和53％。建议的片上天线尺寸为1.35×1×0.06 mm 馈送机制基于电磁能从底部硅层到空腔的顶部圆形贴片的耦合。为了抑制表面波并减少衬底损耗，通过在将顶层连接到接地层的结构外围实现金属过孔，将SIW概念应用于顶层硅层。所建议的片上天线在其0.285–0.325 THz的工作频率范围内，平均测得的辐射增益和效率分别为6.9 dBi和53％。建议的片上天线尺寸为1.35×1×0.06 mm 通过在将顶层连接到接地层的结构外围实现金属过孔，将SIW概念应用于顶层硅层。所建议的片上天线在其0.285–0.325 THz的工作频率范围内平均测得的辐射增益和效率分别为6.9 dBi和53％。建议的片上天线尺寸为1.35×1×0.06 mm 通过在将顶层连接到接地层的结构外围实现金属过孔，将SIW概念应用于顶层硅层。所建议的片上天线在其0.285–0.325 THz的工作频率范围内平均测得的辐射增益和效率分别为6.9 dBi和53％。建议的片上天线尺寸为1.35×1×0.06 mm³。该天线显示出在毫米波和太赫兹集成电路中的应用是可行的。