With the development of device engineering and molecular design, organic field effect transistors (OFETs) with high mobility over 10 cm²·V⁻¹·s⁻¹ have been reported. However, the nonideal double-slope effect has been frequently observed in some of these OFETs, which makes it difficult to extract the intrinsic mobility OFETs accurately, impeding the further application of them. In this review, the origin of the nonideal double-slope effect has been discussed thoroughly, with affecting factors such as contact resistance, charge trapping, disorder effects and coulombic interactions considered. According to these discussions and the understanding of the mechanism behind double-slope effect, several strategies have been proposed to realize ideal OFETs, such as doping, molecular engineering, charge trapping reduction, and contact engineering. After that, some novel devices based on the nonideal double-slope behaviors have been also introduced.

随着设备工程和分子设计的发展，具有超过10 cm ² ·V ^-1 ·s ^-1的高迁移率的有机场效应晶体管（OFET）已经报道。然而，在这些OFET中的一些中经常观察到非理想的双斜率效应，这使得难以准确地提取OFET的固有迁移率，从而阻碍了它们的进一步应用。在这篇综述中，对非理想双斜率效应的起源进行了详尽的讨论，并考虑了诸如接触电阻，电荷俘获，无序效应和库仑相互作用等影响因素。根据这些讨论和对双斜率效应背后机理的理解，提出了几种实现理想的OFET的策略，例如掺杂，分子工程，减少电荷俘获和接触工程。之后，还介绍了一些基于非理想双斜率行为的新型器件。