A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light‐emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)‐based LED chip is analytically analyzed. The contact area was varied by changing the value of the electrode's width from 2 to 12 μm. Efficiency droop and current density at peak IQE are analyzed based on contact area. The width of 2 μm requires 1.6 μAm⁻² current density to achieve peak efficiency and produces a droop of 0.2150. The width of 12 μm requires 9.6 μAm⁻² current density to achieve peak efficiency and produces 0.0557 droop. The increase in contact area increases the current density needed to achieve peak IQE while decreases efficiency droop. The optimal spreader contact width of this vertical LED design is 6 μm.

中文翻译：

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通过电流扩散到电极的接触面积来优化氮化镓基发光二极管的效率

电流扩散层中电流扩散不均匀会大大降低发光二极管（LED）的内部量子效率（IQE）。在基于氮化镓（GaN）的LED芯片的垂直设计中，分析了电流扩展层对电极接触区域朝向IQE的影响。通过将电极的宽度值从2更改为12μm，可以改变接触面积。根据接触面积来分析峰值IQE处的效率下降和电流密度。2μm的宽度需要1 。6μAm ^-2的电流密度以实现峰值效率并产生0.2150的压降。12μm的宽度需要9 。6μAm ^-2电流密度以达到峰值效率并产生0.0557的下降。接触面积的增加增加了达到峰值IQE所需的电流密度，同时降低了效率下降。这种垂直LED设计的最佳散布触点宽度为6μm。