Herein, the electrical characteristics of a p‐type negative‐capacitance field‐effect transistor are investigated using an ultrathin 2.5 nm‐thick HfAlO_x. The optimized performance exhibits a steep subthreshold slope of 35 mV dec⁻¹, a negligible hysteresis of 4 mV, and a low off‐state current of 3 × 10⁻¹³A μm⁻¹. Appropriate aluminum doping into HfAlO_x film can not only improve the leakage current but also stabilize the negative‐capacitance matching. The prominent improvement on the capacitance matching and ferroelectricity can be ascribed to the reduced defect traps and less dielectric crystalline phase during annealing, which is important for the practical application of energy‐efficient logic devices.

中文翻译：

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使用超薄Ha氧化铝的p型铁电场效应晶体管

本文中，使用超薄的2.5 nm厚的HfAlO _x研究了ap型负电容场效应晶体管的电学特性。优化的性能显示出35毫伏的DEC陡峭亚阈值斜率^-1，4毫伏的可忽略的滞后和3×10的低关态电流^-13甲微米^-1。在HfAlO _x膜中适当掺入铝不仅可以改善漏电流，而且可以使负电容匹配稳定。电容匹配和铁电性的显着改善可归因于退火过程中缺陷陷阱的减少和介电晶体相的减少，这对于节能逻辑器件的实际应用非常重要。