TiO₂ has received intense attention for optoelectronic applications due to its excellent properties, such as non‐toxicity, low cost, and simple preparation. Herein, the influence of Li doping both on the structural and optical characteristics of TiO₂ thin films and on optoelectronic properties of TiO₂‐based photodiodes is investigated. The root‐mean‐square (RMS) roughness values obtained from the atomic force microscopy (AFM) results and the optical bandgap energies calculated from the Tauc method vary between 3.40 and 24.53 nm and between 3.58 and 3.75 eV depending on the increase in Li doping, respectively. The ideality factor (n) values of the diodes, which provided information about the performance of diodes, are calculated between 5.92 and 9.74. The lowest n value of 5.92 is obtained for 2% Li‐doped diode. All the fabricated diodes demonstrate a good photodiode behavior, and the maximum photoresponsivity value of 6.74 × 10⁻² A W⁻¹ is obtained for 10% Li:TiO₂. In addition, the C–V, G–V, and R_s–V characteristics of diodes are examined for different frequencies. Li doping has improved the optoelectrical performance of the TiO₂‐based photodiodes. Thus, the Li:TiO₂‐based photodiode can be a candidate for optoelectronic applications.

中文翻译：

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Li：TiO2 / p-Si光电二极管对各种Li掺杂的光电性能

TiO ₂凭借其无毒，低成本和制备简单等优异性能，在光电应用领域受到了广泛关注。在此，研究了锂掺杂对TiO ₂薄膜的结构和光学特性以及对TiO ₂基光电二极管的光电性能的影响。从原子力显微镜（AFM）结果获得的均方根（RMS）粗糙度值以及Tauc方法计算出的带隙能在3.40和24.53 nm之间以及在3.58和3.75 eV之间变化，这取决于Li掺杂的增加， 分别。理想因子（n二极管的值提供了有关二极管性能的信息，其值在5.92和9.74之间计算。2％掺锂二极管的最低n值为5.92。所有制造的二极管均表现出良好的光电二极管性能，并且对于10％Li：TiO ₂可获得6.74×10 ^-2  A W ^-1的最大光响应度值。另外，C-V ，G ^-V ，和- [R_小号-V二极管的特性检查不同的频率。锂掺杂改善了TiO ₂基光电二极管的光电性能。因此，Li：TiO ₂基于光电二极管可以成为光电应用的候选者。