The feasibility of titanium oxide (TiO_x) encapsulation of the source/drain metal contacts of diamond solution‐gate field‐effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiO_x encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable enhancement of the maximum output current and transconductance (g_m) to 3000 μA mm⁻¹ and 11.3 mS mm⁻¹, respectively. Furthermore, the scaling g_m behavior of diamond SGFETs is experimentally studied by means of the channel length for the first time. The g_m is enhanced when the channel length is reduced. The double‐layer capacitance of the diamond SGFET devices with channel mobility of 6–11 cm² (V s)⁻¹ is estimated to be 3–5 μF cm⁻² across the channel length which is adequate for biosensor applications.

中文翻译：

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小型生物传感器应用金刚石溶液-栅极场效应晶体管金属触点TiOx封装的可行性研究

氧化钛的可行性（的TiO _X）金刚石溶液栅场效应晶体管（SGFET），用于生物传感器的应用的源极/漏极金属接触的封装进行了探索。通过这种方法制造的SGFET具有出色的FET特性。为了进行比较，研究了两种不同沟道长度分别为100和1.5μm的SGFET TiO _x封装器件的电特性性能。沟道长度为1.5μm的微型器件将最大输出电流和跨导（g _m）分别显着提高至3000μAmm ^-1和11.3 mS mm ^-1。此外，缩放比例g _m首次通过沟道长度对金刚石SGFET的行为进行了实验研究。所述克_米当沟道长度减小得以提高。沟道迁移率为6-11 cm ²  （V s）^-1的金刚石SGFET器件的双层电容在整个沟道长度上估计为3-5μFcm ^-2，足以满足生物传感器应用的需求。