In this article, we present a high-performance SiGe junctionless FinFET (JLFinFET) on insulator by selective growth of buried oxide (SELBOX) layer device with better electrostatics. The mole fraction x = 0.1, 0.2, 0.3, 0.4, 0.5, and 0.7 with fin width 10 nm and gate length of 20 nm are considered for simulation using technology computer aided design (TCAD) Sentaurus device. With Si_0.9Ge_0.1 JLFinFET on insulator by SELBOX layer, nearly an ideal subthreshold swing of 61.51 mV/decade and enhanced on-current, off-current has been achieved. Evaluation of on-off current ratio, DIBL, SS for different parameters, such as doping concentration (10¹⁵-10¹⁹/cm³), channel length (10-40 nm), temperature (200-700°K) on JLJFinFET on insulator by SELBOX layer are presented. Three-dimensional device simulation using the TCAD software tool Sentaurus Device is used to simulate and the results are compared with a SELBOX JLFinFET.

中文翻译：

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高性能应用 Si0.9Ge0.1 无结 SELBOX FinFET 参数变化的仿真研究

在本文中，我们通过选择性生长具有更好静电性能的掩埋氧化物 (SELBOX) 层器件，展示了绝缘体上的高性能 SiGe 无结 FinFET (JLFinFET)。摩尔分数x  = 0.1、0.2、0.3、0.4、0.5 和 0.7，鳍片宽度为 10 纳米，栅极长度为 20 纳米，考虑使用技术计算机辅助设计 (TCAD) Sentaurus 器件进行模拟。SELBOX 层在绝缘体上使用 Si _0.9 Ge _0.1 JLFinFET，实现了接近 61.51 mV/decade 的理想亚阈值摆幅，并实现了增强的导通电流、截止电流。评估不同参数的开关电流比、DIBL、SS，例如掺杂浓度（10 ¹⁵ -10 ¹⁹ /cm ³)、通道长度 (10-40 nm)、温度 (200-700°K) 上的 JLJFinFET 在绝缘体上的 SELBOX 层。使用 TCAD 软件工具 Sentaurus Device 进行三维器件仿真，仿真结果与 SELBOX JLFinFET 进行比较。