A precursor solution for semiconducting Si called liquid Si (liq‐Si) is synthesized, and semiconducting Si is inkjet‐printed. Satisfactory inkjet discharge is achieved using liq‐Si consisting of liquid‐phase polysilane with an average molecular weight of 2500 g mol⁻¹. The printed liq‐Si is converted into amorphous Si by heating at 400 °C. The resulting Si film has a flat surface with a root‐mean‐square roughness of 0.8 nm. These results are extended to n‐ and p‐type Si films by synthesizing liq‐Si chemically doped with P and B compounds, respectively. Liq‐Si inkjet printing produces Si patterns without using traditional photolithography processes, opening up the field of printed Si electronics.

中文翻译：

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液态硅喷墨印刷

合成了半导体硅的前驱体溶液，称为液态硅（liq-Si），并喷墨印刷了半导体硅。使用由液相聚硅烷组成的平均分子量为2500 g mol ^-1的liq-Si可以实现令人满意的喷墨排放。通过在400°C下加热，印刷的液硅会转变为非晶硅。所得的硅膜表面平坦，均方根粗糙度为0.8 nm。通过分别合成化学掺杂了P和B化合物的liq-Si，这些结果扩展到了n型和p型Si膜。Liq-Si喷墨印刷无需使用传统的光刻工艺即可产生Si图案，从而开拓了印刷Si电子领域。