This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton irradiation when powered up at ultralow bias voltage. Tests were run on standby and while reading the memory. Results show obvious evidence indicating that decreasing the bias voltage below 1 V exponentially increases the number of observed errors. Single-bit upsets (SBUs) and multiple-cell upsets (MCUs) (mostly with vertical shapes according to the manufacturers’ layout) are reported and their behavior is analyzed in this article. Predictions on the single-event upset (SEU) sensitivity obtained with the multiscales single-event phenomena predictive platform (MUSCA-SEP3) modeling tool are also provided and compared with the experimental results. These are also compared with 14.2 MeV neutrons, showing a significant difference in the cross sections for both irradiation sources. Total ionizing dose (TID) tests and GEANT4 simulations were also run to check for the reason behind the difference in the cross section between these two particles.

中文翻译：

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在低 VDD 条件下评估 15 MeV 质子和 14 MeV 中子下的 COTS 65-nm SRAM

本文介绍了商业现货 (COTS) 块状 65 纳米静态随机存取存储器 (SRAM) 在 15.6 MeV 质子辐照下在超低偏置电压下上电时的灵敏度的实验研究。测试在待机和读取内存时运行。结果显示明显的证据表明，将偏置电压降低到 1 V 以下会以指数方式增加观察到的错误数量。本文报告了单位翻转 (SBU) 和多单元翻转 (MCU)（根据制造商的布局大多具有垂直形状）并分析了它们的行为。还提供了对使用多尺度单事件现象预测平台 (MUSCA-SEP3) 建模工具获得的单事件翻转 (SEU) 灵敏度的预测，并与实验结果进行了比较。这些也与 14 进行了比较。2 MeV 中子，显示两种辐射源的横截面存在显着差异。还运行了总电离剂量 (TID) 测试和 GEANT4 模拟，以检查这两种粒子之间横截面差异背后的原因。