Metal–oxide–semiconductor field-effect transistors (MOSFETs) have significant role on producing the electronic devices. The producers try to make the chips in smaller size so they need materials with high dielectric constant. Here, in this research, Al/Sn/La₂O₃ will introduce as a material with higher dielectric constant and less defections. In this research, Al/Sn/La₂O₃ nanostructure was prepared by sol–gel and spin-coating methods. Lanthanum chloride (LaCl₃·7H₂O), cetyltrimethylammonium bromide, ammonia (25%), aluminum tri-sec-butylate (C₁₂H₂₇AlO₃), acetyl acetone (C₂H₅O₈), isopropyl alcohol (C₃H₈O), Tin (II) chloride (SnCl₂) and H₂O were used to synthesize Al/Sn/La₂O₃. Structural properties and surface morphology of nanocrystallites were investigated by X-ray diffraction, differential scanning calorimetry, scanning electron microscopy, atomic force microscopy and Fourier-transform infrared radiation, respectively. Electrical properties were determined with metal–dielectric–semiconductor through capacitance–voltage (C–V), the hysteresis curve and current density–voltage (J–V). The conduction mechanism was measured in the temperature range of 330 K < T < 410 K and in the electrical field < 0.12 MV cm⁻¹, and the results showed ohmic emission. A thermal excited model was proposed to explain the mechanism of ohmic conduction current. The highest value of dielectric constant (k) for Al/Sn/La₂O₃ structure was 33 at T = 250 °C with almost amorphous structure. The result showed that \( \frac{{I_{\text{on}} }}{{I_{\text{off}} }} \) of Al/Sn/La₂O₃ structure was ~ 1.3. The leakage current and capacitance–voltage of Al/Sn/La₂O₃ nanocomposite for the sample calcined at T = 250 °C showed that this sample can be good enough for using as a gate dielectric of MOSFETs.

金属氧化物半导体场效应晶体管（MOSFET）在生产电子设备方面起着重要作用。生产商试图使芯片尺寸更小，因此他们需要具有高介电常数的材料。这里，在这项研究中，将引入Al / Sn / La ₂ O ₃作为具有较高介电常数和较少缺陷的材料。在这项研究中，通过溶胶-凝胶法和旋涂法制备了Al / Sn / La ₂ O ₃纳米结构。氯化镧（LaCl ₃ ·7H ₂ O），十六烷基三甲基溴化铵，氨（25％），三仲丁酸铝（C ₁₂ H ₂₇ AlO ₃），乙酰丙酮（C ₂ H₅ O ₈），异丙醇（C ₃ H ₈ O），氯化锡（II）（SnCl ₂）和H ₂ O用于合成Al / Sn / La ₂ O ₃。分别通过X射线衍射，差示扫描量热法，扫描电子显微镜，原子力显微镜和傅立叶变换红外辐射研究了纳米微晶的结构性质和表面形态。电性能是通过电容-电压（具有金属-电介质-半导体确定C-V ）时，磁滞曲线和电流密度-电压（Ĵ - V）。在330 K < T  <410 K的温度范围内和在<0.12 MV cm ^-1的电场下测量导电机理 ，结果显示为欧姆发射。提出了一种热激励模型来解释欧姆传导电流的机理。Al / Sn / La ₂ O ₃结构的最高介电常数（k）在T  = 250°C时几乎为非晶结构，为33 。结果表明，Al / Sn / La ₂ O ₃结构的\（\ frac {{I _ {\ text {on}}}} {{I _ {\ text {off}}}}} \）为〜1.3。Al / Sn / La ₂ O ₃的泄漏电流和电容-电压在T  = 250°C下煅烧的样品的纳米复合材料表明，该样品足以用作MOSFET的栅极电介质。