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Laser Desorption of Organic Compound Ions from a Silicon Surface Modified by Laser Irradiation
Physics of Wave Phenomena ( IF 1.4 ) Pub Date : 2020-10-20 , DOI: 10.3103/s1541308x20030164
A. V. Pento , S. M. Nikiforov , Ya. O. Simanovsky

Abstract

Laser desorption of organic compound ions from specially prepared surfaces is known as surface-assisted laser desorption/ionization (SALDI). In this work the properties of a SALDI ion emitter obtained by two-stage laser treatment of crystalline silicon surface have been investigated. The laser surface treatment leads to the formation of a layer with nanoscale objects—quantum dots (QDs) less than 10 nm in size, providing laser desorption of organic compound ions. A change in the desorbing laser wavelength from 351 to 263 nm at comparable laser-exposed spot sizes and fluences results in a sharp decrease in the formation efficiency for MH+ ions and appearance of ions M+ for the same analytes. The effect is apparently determined by the spectral properties of the quantum dots formed on the silicon surface under laser irradiation.



中文翻译:

从激光辐照改性的硅表面上激光解吸有机化合物离子

摘要

从特殊制备的表面进行激光对有机化合物离子的解吸称为表面辅助激光解吸/电离(SALDI)。在这项工作中,已经研究了通过两步激光处理晶体硅表面获得的SALDI离子发射体的性能。激光表面处理导致形成具有纳米级物体(尺寸小于10 nm的量子点(QD))的层,从而提供有机化合物离子的激光解吸。在相当的激光曝光光斑大小和注量下,解吸激光波长从351 nm变为263 nm,导致MH +离子的形成效率和M +离子的出现急剧下降。对于相同的分析物。该效果显然是由在激光照射下在硅表面上形成的量子点的光谱特性决定的。

更新日期:2020-10-20
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