In this work, we present a review of quantum dot (QD) material systems that allow us to obtain light emission in the telecom C-band at 1.55 µ m. These epitaxial semiconductor nanostructures are of great technological interest for the development of devices for the generation of on-demand quanta of light for long-haul communication applications. The material systems considered are InAs QDs grown on InP, metamorphic InAs/InGaAs QDs grown on GaAs, InAs/GaSb QDs grown on Si, and InAsN QDs grown on GaAs. In order to provide a quantitative comparison of the different material systems, we carried out numerical simulations based on envelope function approximation to calculate the strain-dependant energy band profiles and the associated confined energy levels. We have also derived the eigenfunctions and the optical matrix elements for confined states of the systems. From the results of the simulations, some general conclusions on the strengths and weaknesses of each Q...

中文翻译：

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审查1.55μm单光子发射的量子点：材料的定量比较

在这项工作中，我们介绍了量子点（QD）材料系统，该系统使我们能够获得1.55 µm的电信C波段光发射。这些外延半导体纳米结构对于用于产生用于长距离通信应用的光的按需量子的装置的开发具有重大的技术兴趣。考虑的材料系统是在InP上生长的InAs QD，在GaAs上生长的变质InAs / InGaAs QD，在Si上生长的InAs / GaSb QD和在GaAs上生长的InAsN QD。为了提供不同材料系统的定量比较，我们基于包络函数近似进行了数值模拟，以计算应变相关能带分布图和相关的受限能级。我们还导出了系统的受限状态的本征函数和光学矩阵元素。从仿真结果中，可以得出关于每个Q的优缺点的一些一般性结论。