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Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-10-15 , DOI: 10.1088/1361-6641/abb8fb
Hui Guo 1 , Xiuling Jia 2 , Yan Dong 1 , Jiandong Ye 1 , Dunjun Chen 1 , Rong Zhang 1 , Youdou Zheng 1
Affiliation  

AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated their extraordinary potential in developing solid-state microsensors for detecting gases, metal ions, anions, biomolecules, and other substances due to their excellent chemical stability, high surface charge sensitivity, high temperature-tolerance performance, and low power consumption characteristics. In this paper, only three types of AlGaN/GaN HEMT-based sensors used for detecting the p H value, heavy metal ions, and harmful anions, which are suitable for water quality monitoring, will be discussed. First, we introduce the structural design, detection principle, and fabrication processes of AlGaN/GaN HEMT-based sensors. Then, surface functionalization methods for the gate region, sensing mechanisms, and the sensitivity and selectivity performances based on different gate region treatments are reviewed and analyzed. Finally, some challenging problems that hinder the practical application of the sensor...

中文翻译:

AlGaN / GaN高电子迁移率晶体管传感器在水质监测中的应用

AlGaN / GaN高电子迁移率晶体管(HEMT)由于其出色的化学稳定性,高表面电荷敏感性,耐高温性能,在开发用于检测气体,金属离子,阴离子,生物分子和其他物质的固态微传感器方面已展示出其非凡的潜力。容忍性能好,功耗低的特点。在本文中,仅讨论适用于水质监测的三种类型的用于检测p H值的AlGaN / GaN HEMT基传感器,重金属离子和有害阴离子。首先,我们介绍基于AlGaN / GaN HEMT的传感器的结构设计,检测原理和制造工艺。然后,针对栅极区域的表面功能化方法,感应机制,并对基于不同栅区处理的灵敏度和选择性性能进行了综述和分析。最后,一些具有挑战性的问题阻碍了传感器的实际应用...
更新日期:2020-10-19
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