Radiation tolerance of a 64-channels Application Specific Integrated Circuit (ASIC) used for the readout of scintillation neutron detector at CSNS has been tested using 1 MeV neutrons. This kind of ASICs is designed in 350 nm CMOS processes and consists of a charge sensitive pre-amplifier (CSA), a fast shaper amplifier, a discriminator and a mono-stable. MOS transistors are utilized to build the input stage in the CSA. After neutron irradiations, the gain and the rising time are not changed, but the increasement of background noise is observed. Similar degradations are also found in the leakage current of MOS transistors manufactured by similar process as the ASIC. The similar responses support that the noise degradation of ASIC should originate from the degradation of the individual MOS transistors. Further, we deduce these phenomenon to the displacement damage in Si substrate induced by neutrons.

中文翻译：

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中子线在350 nm CMOS技术中导致ASIC的噪声衰减

已经使用1 MeV中子测试了用于在CSNS上读取闪烁中子探测器的64通道专用集成电路（ASIC）的辐射容限。这种ASIC是在350 nm CMOS工艺中设计的，由电荷敏感的前置放大器（CSA），快速整形放大器，鉴别器和单稳态组成。MOS晶体管用于在CSA中构建输入级。中子辐照后，增益和上升时间没有改变，但是观察到背景噪声的增加。在通过与ASIC相似的工艺制造的MOS晶体管的泄漏电流中也发现了类似的劣化。类似的响应支持ASIC的噪声降级应源自各个MOS晶体管的降级。进一步，