A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of ${\mathrm{l}}_g/l_{sd}$ (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs.

中文翻译：

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极化库仑场散射在具有I–V特性的AlGaN / GaN HFET的基于物理的紧凑模型中的应用

基于AlGaAs / GaAs HFET，开发了基于物理的AlGaN / GaN HFET输出电流-电压（IV）特性模型。事实证明极化库仑场（PCF）散射极大地影响了沟道电子迁移率。在不同的栅极偏置下，沟道电子迁移率会因PCF散射而变化。此外，负栅极偏置更大，比率更低${\mathrm{升}}_G/{升}_{sd}$器件的（栅极长度/源极-漏极空间）（栅极长度/源极-漏极空间）会使PCF散射对沟道电子迁移率产生更大的影响。这项工作是首次将PCF散射应用于具有I–V特性的AlGaN / GaN HFET的基于物理的模型，结果表明PCF散射对于识别AlGaN / GaN IV特性的基于物理的模型至关重要HFET。