The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

显示技术的快速发展引起了人们对微尺度自发光、单独控制的光源阵列的兴趣。氮化镓 (GaN) 微型发光二极管 (LED) 技术满足了这一需求。然而，目前的技术不适合制造可单独控制的亚微米光源阵列。我们的方法基于纳米 LED 阵列，可以直接寻址每个阵列元素和尺寸低于光波长的自间距。详细解释了设计和制造过程，并具有两种几何形状：具有 400 nm LED 的 6 × 6 阵列和具有 200 nm LED 的 2 × 32 线阵列。这些纳米 LED 被开发为新型片上超分辨率显微镜的核心元件。GaN 技术，基于其物理特性，