Semiconducting quantum dot (QD) materials formed by the combination of groups I, III and VI elements are perceived as promising green materials with excellent photovoltaic properties, owing to their near‐infrared (NIR) remarkable range and less harmful elements. In this study electroactive ∼7 nm copper indium selenide quantum dot (CuInSe₂ QD) capped with generation 1 poly (propylene thiophene) dendrimer (G1PPT), was synthesised via the hot injection method. Fourier transform infrared spectroscopy (FT‐IR) signatures of the dendrimer confirmed the effective functionalization of CuInSe₂ with G1PPT. Characteristic ultraviolet‐visible (UV‐Vis) absorption band at 784 nm and a Tauc plot band gap energy (E_gd) value of 1.51 eV which indicates a very significant photovoltaic behaviour of the CuInSe₂‐G1PPT QD. The cyclic voltammetrically‐deduced HOMO (‐5.140 eV) and LUMO (−3.537 eV) energy levels gave an electrochemical bandgap ( ) value of 1.60 eV. The electron‐hole Coulomb interaction energy ( ) was determined to be 90 MeV, which confirms that the light absorbed by CuInSe₂‐G1PPT QD mainly produce photon absorption excitons, making the material highly suitable for photovoltaic application.

中文翻译：

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聚合物稳定的硒化铜铟硒量子点的光电

由I，III和VI组元素组合而成的半导体量子点（QD）材料因其近红外（NIR）范围广，有害元素少而被认为是具有优异光伏性能的有前途的绿色材料。在这项研究中，通过热注射法合成了由第1代聚（丙烯噻吩）树枝状大分子（G1PPT）覆盖的电活性〜7 nm硒化铜铟硒量子点（CuInSe ₂ QD）。树枝状聚合物的傅里叶变换红外光谱（FT-IR）签名证实了CuInSe ₂与G1PPT的有效功能化。784 nm处的特征性紫外可见（UV-Vis）吸收带和Tauc图带隙能（E _gd）的1.51 eV值表明CuInSe ₂ -G1PPT QD具有非常重要的光伏性能。循环伏安推导的HOMO（-5.140 eV）和LUMO（-3.537 eV）能级给出的电化学带隙（ ）值为1.60 eV。确定的电子-空穴库仑相互作用能（ ）为90 MeV，这证实了CuInSe ₂ -G1PPT QD吸收的光主要产生光子吸收激子，从而使该材料非常适合光伏应用。